Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs

In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While performance limit vertical devices is well understood, FOMs are not properly described by current models. This work investigates specific characteristics depletion in devices, particularly focusing on substantial potential Polarization Super Junctions (PSJs) compared conventional High-Electron-Mobility Transistors (HEMTs). Our results show that PSJs can result more than 10-fold decrease on-resistance for same breakdown voltage HEMTs, which be further improved use multi-channel heterostructures. addition, demonstrate lead significant reduction RON x Eoss figure-ofmerit, both case negligible dominating parasitic contributions. enables proper evaluation main shows reduce DC switching losses